81RM60

Technical Characteristics

• Inclosure Material

  metal

• Mounting Facility Quantity

  1

• Internal Configuration

  junction contact

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-94

• Internal Junction Configuration

  npn

• Nominal Thread Size

  0.500 inches

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  600.0 maximum repetitive peak reverse voltage and 720.0 maximum nonrepetitive peak reverse voltage,maximum peak total value

• Power Rating Per Characteristic

  10.0 watts maximum peak gate power dissipation

• Terminal Type And Quantity

  1 threaded stud and 3 tab,solder lug

• Thread Series Designator

  unf

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius junction

• Current Rating Per Characteristic

  80.00 amperes maximum on-state current,rms total and 50.00 amperes maximum on-state current,average

• Overall Width Across Flats

  1.062 inches maximum

• Features Provided

  hermetically sealed case

• Mounting Method

  threaded stud

• Overall Length

  0.805 inches maximum