901449
Semiconductor Devices and Associated Hardware
TRANSISTOR
901449
5961 - Semiconductor Devices and Associated Hardware
Bae Systems Integrated Defense
TRANSISTOR
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Technical Characteristics
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to base voltage/static/emitter open and 60.0 maximum collector to emitter voltage/static/base open and -5.0 maximum emitter to base voltage, static, collector open
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Inclosure Material
metal
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Length
0.750 inches minimum
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Mounting Method
terminal
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Terminal Circle Diameter
0.100 inches nominal
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Current Rating Per Characteristic
0.60 amperes maximum collector current, dc
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Power Rating Per Characteristic
400.0 milliwatts maximum collector power dissipation
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Special Features
junction pattern arrangement: pnp
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Terminal Type And Quantity
3 uninsulated wire lead