901449

Semiconductor Devices and Associated Hardware

TRANSISTOR

901449

5961-01-109-0796

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Integrated Defense

TRANSISTOR

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Technical Characteristics

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum collector to base voltage/static/emitter open and 60.0 maximum collector to emitter voltage/static/base open and -5.0 maximum emitter to base voltage, static, collector open

  • Inclosure Material

    metal

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Terminal Length

    0.750 inches minimum

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.100 inches nominal

  • Current Rating Per Characteristic

    0.60 amperes maximum collector current, dc

  • Power Rating Per Characteristic

    400.0 milliwatts maximum collector power dissipation

  • Special Features

    junction pattern arrangement: pnp

  • Terminal Type And Quantity

    3 uninsulated wire lead

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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