N2617F

Technical Characteristics

• Features Provided

  positive outputs and hermetically sealed and high speed and monolithic and 3-state output

• Body Height

  0.150 inches minimum and 0.180 inches maximum

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Operating Temp Range

  +0.0/+70.0 deg celsius

• Time Rating Per Chacteristic

  400.00 nanoseconds maximum propagation delay time, low to high level output and 400.00 nanoseconds maximum propagation delay time, high to low level output

• Memory Capacity

  unknown

• Test Data Document

  28480-1818-0426 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Body Length

  1.230 inches maximum

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Inclosure Material

  ceramic and glass

• Inclosure Configuration

  dual-in-line

• Bit Quantity (Non-Core)

  16384

• Terminal Type And Quantity

  24 printed circuit

• Body Width

  0.580 inches minimum and 0.620 inches maximum

• Input Circuit Pattern

  13 input

• Word Quantity (Non-Core)

  2048