MJ11016
Semiconductor Devices and Associated Hardware
TRANSISTOR
MJ11016
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage, collector-to-base, emitter open and 120.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum emitter to base voltage, static, collector open
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End Item Identification
xm2
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Electrode Internally-Electrically Connected To Case
cathode
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Terminal Type And Quantity
2 pin
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Transfer Ratio
200.0 minimum static forward current transfer ratio, common-emitter
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Overall Length
1.573 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Overall Height
0.250 inches minimum and 0.450 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Power Rating Per Characteristic
200.0 watts small-signal input power, common-collector absolute
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Current Rating Per Characteristic
1.00 amperes source cutoff current minimum and 30.00 amperes source cutoff current maximum
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Mounting Facility Quantity
2