2N4123
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N4123
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
40.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.105 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Current Rating Per Characteristic
200.00 milliamperes source cutoff current maximum
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Overall Length
0.210 inches maximum
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Semiconductor Material
silicon
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Inclosure Material
plastic
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Power Rating Per Characteristic
350.0 milliwatts small-signal input power, common-collector preset
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Overall Width
0.205 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-92
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Overall Height
0.165 inches maximum
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Terminal Length
0.500 inches minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction