635A803H01
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
635A803H01
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.550 inches maximum
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Internal Configuration
junction contact
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.250 inches
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
600.0 maximum repetitive peak off-state voltage and 600.0 maximum repetitive peak reverse voltage, maximum peak total value
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Mounting Facility Quantity
1
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Internal Junction Configuration
pnpn
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Overall Width Across Flats
0.534 inches minimum and 0.562 inches maximum
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Current Rating Per Characteristic
35.00 amperes maximum on-state current, rms total
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Power Rating Per Characteristic
10.0 watts maximum average gate power-forward
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Test Data Document
97942-635a803 drawing
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Thread Series Designator
unf
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Terminal Type And Quantity
1 threaded stud and 2 tab, solder lug