ITS4029
Semiconductor Devices and Associated Hardware
TRANSISTOR
ITS4029
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
field effect
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
60.0 maximum drain to source voltage and -30.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Overall Diameter
0.370 inches maximum
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Length
0.260 inches maximum
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Terminal Length
0.500 inches minimum
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
3.00 amperes maximum drain current
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-39
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Test Data Document
82577-928923 drawing
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Semiconductor Material
silicon
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Power Rating Per Characteristic
6.25 watts maximum total device dissipation
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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(Non-Core Data) Channel Polarity And Control Type
n-channel insulated gate type