SS25205-501
Semiconductor Devices and Associated Hardware
TRANSISTOR
SS25205-501
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Special Features
junction pattern arrangement: pnp
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Overall Diameter
0.875 inches maximum
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Internal Configuration
junction contact
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Power Rating Per Characteristic
200.0 watts small-signal input power, common-collector absolute
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector to emitter, sustained
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Channel Polarity And Control Type (Non-Core)
p-channel junction type
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Current Rating Per Characteristic
30.00 amperes source cutoff current maximum
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Overall Length
0.375 inches nominal