N82S129F
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
N82S129F
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Body Length
0.790 inches maximum
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Body Width
0.300 inches maximum
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Maximum Power Dissipation Rating
512.0 milliwatts
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Operating Temp Range
m0.0/p75.0 deg celsius
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Features Provided
hermetically sealed and programmable and bipolar and w/enable
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Inclosure Configuration
dual-in-line
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Output Logic Form
transistor-transistor logic
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Input Circuit Pattern
10 input
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Bit Quantity
1024
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Word Quantity
256
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Memory Device Type
rom
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Body Height
0.175 inches maximum
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Storage Temp Range
m65.0/p150.0 deg celsius
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder
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Voltage Rating And Type Per Characteristic
7.0 volts maximum power source
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Time Rating Per Chacteristic
25.00 nanoseconds maximum propagation delay time,low to high level output and 25.00 nanoseconds maximum propagation delay time,high to low level output
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Unpackaged Unit Weight
2.2 grams
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Terminal Type And Quantity
16 printed circuit