2135192-3

Technical Characteristics

• Semiconductor Material

  silicon

• Transfer Ratio

  150.0 maximum static forward current transfer ratio, common-emitter

• Terminal Length

  1.500 inches minimum

• Voltage Rating In Volts Per Characteristic

  120.0 maximum collector to emitter voltage/static/base open and 120.0 maximum collector to base voltage, dc and 4.0 maximum emitter to base voltage, dc

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Overall Length

  0.250 inches nominal

• Electrode Internally-Electrically Connected To Case

  collector

• Inclosure Material

  metal

• Overall Diameter

  0.352 inches nominal

• Terminal Type And Quantity

  3 uninsulated wire lead

• Mounting Method

  terminal

• Terminal Circle Diameter

  0.200 inches nominal

• Current Rating Per Characteristic

  1.00 amperes source cutoff current maximum and 0.50 amperes source cutoff current minimum

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Power Rating Per Characteristic

  10.0 watts small-signal input power, common-collector absolute

• Features Provided

  hermetically sealed case

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-5