63SE123
Semiconductor Devices and Associated Hardware
TRANSISTOR
63SE123
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Current Rating Per Characteristic
-10.00 amperes source cutoff current maximum and -4.00 amperes source cutoff current minimum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Overall Diameter
1.050 inches maximum
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Features Provided
hermetically sealed case
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Overall Length
0.450 inches maximum
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Semiconductor Material
silicon
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Terminal Type And Quantity
1 case and 2 uninsulated wire lead
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector preset
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
180.0 maximum breakdown voltage, collector-to-emitter, base open and -100.0 maximum breakdown voltage, collector-to-base, emitter open and -100.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and -5.5 maximum
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~1
breakdown voltage, emitter-to-base, collector open