EP2970
Semiconductor Devices and Associated Hardware
TRANSISTOR
EP2970
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
TRANSISTOR
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-220
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Mounting Facility Quantity
1
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Power Rating Per Characteristic
40.0 watts small-signal input power, common-collector preset
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Overall Width
0.410 inches maximum
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Overall Length
0.600 inches maximum
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Internal Configuration
junction contact
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Current Rating Per Characteristic
1.00 amperes source cutoff current maximum and 0.60 amperes source cutoff current minimum
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Special Features
junction pattern arrangement: npn
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Semiconductor Material
silicon
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Transfer Ratio
150.0 maximum static forward current transfer ratio, common-emitter
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Inclosure Material
plastic
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Voltage Rating In Volts Per Characteristic
400.0 maximum collector-to-emitter voltage, instantaneous and 500.0 maximum collector to base voltage, dc and 5.0 maximum emitter to base voltage, dc
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Overall Height
0.190 inches maximum
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Mounting Method
unthreaded hole
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Terminal Type And Quantity
3 pin