H2195-1110-3
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
H2195-1110-3
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Power Rating Per Characteristic
3.0 watts any acceptable universal and 16.0 watts small-signal input power, common-collector blank
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Mounting Facility Quantity
1
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Thread Series Designator
unf
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Current Rating Per Characteristic
470.00 amperes forward current, average megahertz and 11000.00 amperes forward current, average preset
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Voltage Rating In Volts Per Characteristic
1200.0 maximum nonrepetitive peak reverse voltage and 1000.0 maximum repetitive peak off-state voltage and 1100.0 maximum repetitive peak reverse voltage and 470.0 maximum reverse voltage, total rms
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Mounting Method
threaded stud
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Terminal Type And Quantity
1 threaded stud and 3 insulated wire lead w/terminal lug
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Overall Length
10.463 inches nominal
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Semiconductor Material
silicon
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-118
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Nominal Thread Size
0.750 inches
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Inclosure Material
metal
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Overall Width Across Flats
1.668 inches nominal