68EG109

Technical Characteristics

• Precious Material And Location

  terminals and stud surfaces gold

• Semiconductor Material

  silicon

• End Item Identification

  an/wlq-4(v) 07397

• Overall Height

  0.370 inches maximum

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Power Rating Per Characteristic

  100.0 watts small-signal input power, common-collector preset

• Overall Length

  0.675 inches maximum

• Voltage Rating In Volts Per Characteristic

  200.0 maximum breakdown voltage, collector-to-emitter, base open and 210.0 maximum breakdown voltage, collector to emitter, with specified voltage between base and emitter and 6.0 maximum breakdown voltage, emitter-to-base, collector open

• Inclosure Material

  metal

• Nominal Thread Size

  0.250 inches

• Current Rating Per Characteristic

  6.00 amperes source cutoff current maximum

• Mounting Method

  threaded stud

• Mounting Facility Quantity

  1

• Terminal Type And Quantity

  3 uninsulated wire lead

• Thread Series Designator

  unf

• Test Data Document

  03640-6086937 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Special Features

  junction pattern arrangement: pnp

• Precious Material

  gold

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-228

• Internal Configuration

  junction contact

• Overall Width

  0.625 inches maximum

• Features Provided

  hermetically sealed case