N82S129F

Technical Characteristics

• Features Provided

  burn in and monolithic and hermetically sealed and programmed

• Word Quantity (Non-Core)

  256

• Maximum Power Dissipation Rating

  512.0 milliwatts

• Operating Temp Range

  +0.0/+70.0 deg celsius

• Current Rating Per Characteristic

  120.00 milliamperes reverse current, dc absolute

• Body Height

  0.175 inches maximum

• Body Width

  0.302 inches maximum

• Body Length

  0.785 inches maximum

• Memory Device Type

  prom

• Input Circuit Pattern

  10 input

• Terminal Type And Quantity

  16 printed circuit

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Inclosure Configuration

  dual-in-line

• Time Rating Per Chacteristic

  50.00 nanoseconds maximum access

• Bit Quantity (Non-Core)

  1024

• Output Logic Form

  transistor-transistor logic

• Capitance Rating Per Characteristic

  5.00 input picofarads nominal and 8.00 output picofarads nominal