IRF333
Semiconductor Devices and Associated Hardware
TRANSISTOR
IRF333
5961 - Semiconductor Devices and Associated Hardware
International Rectifier Corporation
TRANSISTOR
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Technical Characteristics
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Electrode Internally-Electrically Connected To Case
collector
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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End Item Identification
4920-01-094-8835 03640
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Inclosure Material
metal
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Internal Configuration
field effect
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Mounting Method
unthreaded hole
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Mounting Facility Quantity
2
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Voltage Rating In Volts Per Characteristic
350.0 maximum drain to source voltage
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Terminal Type And Quantity
1 case and 2 pin
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Semiconductor Material
silicon
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Overall Length
0.450 inches maximum
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Features Provided
hermetically sealed case
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Overall Diameter
0.875 inches maximum
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Power Rating Per Characteristic
75.0 watts small-signal input power, common-collector absolute
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Current Rating Per Characteristic
3.50 amperes source cutoff current maximum of standard range