C126M

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

C126M

5961-01-121-7914

5961 - Semiconductor Devices and Associated Hardware

General Electric Co

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Length

    0.650 inches maximum

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    16.0 watts maximum peak gate power dissipation

  • Special Features

    junction pattern arrangement: pnpn

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Overall Height

    0.190 inches maximum

  • Overall Width

    0.420 inches maximum

  • Mounting Facility Quantity

    1

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-220

  • Mounting Method

    unthreaded hole

  • Voltage Rating In Volts Per Characteristic

    600.0 maximum repetitive peak reverse voltage and 600.0 maximum repetitive peak off-state voltage

  • Current Rating Per Characteristic

    8.00 amperes maximum on-state current, rms total

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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