GT816GH1
Semiconductor Devices and Associated Hardware
TRANSISTOR
GT816GH1
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
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Technical Characteristics
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Current Rating Per Characteristic
70.00 amperes source cutoff current maximum and 15.00 amperes source cutoff current minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Power Rating Per Characteristic
350.0 watts small-signal input power, common-collector minimum
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Thread Series Designator
unf
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Mounting Facility Quantity
1
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
threaded stud
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-63
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Voltage Rating In Volts Per Characteristic
10.0 maximum emitter to base voltage, static, collector open and 450.0 maximum breakdown voltage, collector-to-base, emitter open and 400.0 maximum breakdown voltage, collector-to-emitter, base open
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Inclosure Material
metal
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Overall Length
1.462 inches nominal
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Nominal Thread Size
0.312 inches
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Overall Width Across Flats
0.865 inches nominal
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Terminal Type And Quantity
3 tab, solder lug
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Special Features
junction pattern arrangement: npn
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Internal Configuration
junction contact