N82S185-F
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
N82S185-F
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Storage Temp Range
-65.0 to 150.0 deg celsius
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Inclosure Material
ceramic
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Input Circuit Pattern
12 input
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Time Rating Per Chacteristic
40.00 nanoseconds maximum propagation delay time, low to high level output and 40.00 nanoseconds maximum propagation delay time, high to low level output
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Memory Device Type
prom
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Unpackaged Unit Weight
3.0 grams
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Terminal Type And Quantity
18 printed circuit
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Body Length
0.925 inches maximum
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Body Width
0.302 inches maximum
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Body Height
0.175 inches maximum
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Maximum Power Dissipation Rating
409.6 milliwatts
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Operating Temp Range
-0.0 to 75.0 deg celsius
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Features Provided
hermetically sealed and programmable and bipolar and 3-state output and w/enable
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Inclosure Configuration
dual-in-line
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Output Logic Form
transistor-transistor logic
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Bit Quantity
8192
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Word Quantity
2048
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Voltage Rating And Type Per Characteristic
7.0 volts maximum total supply