N82S185F
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
N82S185F
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Time Rating Per Chacteristic
40.00 nanoseconds maximum propagation delay time, low to high level output and 40.00 nanoseconds maximum propagation delay time, high to low level output
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Features Provided
3-state output and bipolar and programmable and hermetically sealed and w/enable
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Body Length
0.925 inches maximum
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Body Height
0.175 inches maximum
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Body Width
0.302 inches maximum
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Memory Capacity
unknown
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Maximum Power Dissipation Rating
409.6 milliwatts
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Bit Quantity (Non-Core)
8192
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Storage Temp Range
-65.0/+150.0 deg celsius
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Memory Device Type
rom
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder
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Voltage Rating And Type Per Characteristic
7.0 volts maximum power source
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Input Circuit Pattern
12 input
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Terminal Type And Quantity
18 printed circuit
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Operating Temp Range
+0.0/+75.0 deg celsius
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Inclosure Configuration
dual-in-line
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Word Quantity (Non-Core)
2048
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Output Logic Form
transistor-transistor logic