TXBT2101
Semiconductor Devices and Associated Hardware
TRANSISTOR
TXBT2101
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
4 ribbon
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Precious Material And Location
terminal surface gold
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Maximum Operating Temp Per Measurement Point
300.0 deg celsius junction
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Power Rating Per Characteristic
900.0 milliwatts maximum total power dissipation
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Features Provided
hermetically sealed case and gold plated leads
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Internal Junction Configuration
pn
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Precious Material
gold
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Current Rating Per Characteristic
70.00 milliamperes maximum gate 1 current
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Voltage Rating In Volts Per Characteristic
30.0 maximum collector to base voltage,dc and 20.0 maximum collector to emitter voltage,dc and 1.5 maximum emitter supply voltage
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Semiconductor Material
silicon
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Mounting Method
press fit
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Internal Configuration
junction contact
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Overall Diameter
0.090 inches minimum and 0.110 inches maximum
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Overall Length
0.050 inches nominal
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Inclosure Material
ceramic and metal