932750-1B

Technical Characteristics

• Inclosure Configuration

  flat pack

• Inclosure Material

  glass and metal

• Terminal Type And Quantity

  18 flat leads

• Features Provided

  w/buffered output and electrostatic sensitive and bipolar and burn in, mil-std-883, class b and monolithic and hermetically sealed and programmable and 3-state output

• Maximum Power Dissipation Rating

  175.0 milliwatts

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Body Width

  0.355 inches minimum and 0.400 inches maximum

• Body Length

  0.355 inches minimum and 0.400 inches maximum

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  12 input

• Time Rating Per Chacteristic

  75.00 nanoseconds maximum propagation delay time, low to high level output and 75.00 nanoseconds maximum propagation delay time, high to low level output

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Output Logic Form

  transistor-transistor logic

• Test Data Document

  82577-932883 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Word Quantity (Non-Core)

  1024

• Bit Quantity (Non-Core)

  4096

• Body Height

  0.090 inches maximum