53S441-F
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
53S441-F
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Inclosure Material
glass and metal
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Terminal Type And Quantity
18 flat leads
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Features Provided
bipolar and burn in, mil-std-883, class b and programmable and hermetically sealed and w/buffered output and monolithic and electrostatic sensitive and 3-state output
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Maximum Power Dissipation Rating
175.0 milliwatts
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Storage Temp Range
-65.0/+150.0 deg celsius
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Memory Device Type
rom
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Body Width
0.355 inches minimum and 0.400 inches maximum
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Body Length
0.355 inches minimum and 0.400 inches maximum
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Terminal Surface Treatment
solder
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Input Circuit Pattern
12 input
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Time Rating Per Chacteristic
75.00 nanoseconds maximum propagation delay time, low to high level output and 75.00 nanoseconds maximum propagation delay time, high to low level output
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Voltage Rating And Type Per Characteristic
5.5 volts maximum power source
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Output Logic Form
transistor-transistor logic
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Body Height
0.090 inches maximum
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Bit Quantity (Non-Core)
4096
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Word Quantity (Non-Core)
1024
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Operating Temp Range
-55.0/+125.0 deg celsius
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Test Data Document
82577-932883 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Inclosure Configuration
flat pack