N82S115N

Microcircuits, Electronic

MICROCIRCUIT,MEMORY

N82S115N

5962-01-125-3106

5962 - Microcircuits, Electronic

Philips Semiconductors Inc

MICROCIRCUIT,MEMORY

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Technical Characteristics

  • Bit Quantity

    4096

  • Time Rating Per Chacteristic

    60.00 nanoseconds maximum propagation delay time, low to high level output and 6

  • Terminal Type And Quantity

    24 printed circuit

  • Body Length

    1.255 inches maximum

  • Body Width

    0.545 inches minimum and 0.555 inches maximum

  • End Item Identification

    c130e-t59 fscm 36378

  • ~1

    e output

  • Features Provided

    monolithic and positive outputs and bipolar and w/enable and schottky and 3-stat

  • Inclosure Material

    plastic

  • Output Logic Form

    transistor-transistor logic

  • Input Circuit Pattern

    12 input

  • Body Height

    0.140 inches minimum and 0.180 inches maximum

  • Maximum Power Dissipation Rating

    1225.0 milliwatts

  • Operating Temp Range

    -0.0/+75.0 deg celsius

  • Storage Temp Range

    -65.0/+150.0 deg celsius

  • Inclosure Configuration

    dual-in-line

  • Word Quantity

    512

  • Terminal Surface Treatment

    solder

  • Voltage Rating And Type Per Characteristic

    -1.5 volts minimum power source and 5.5 volts maximum power source

  • ~1

    0.00 nanoseconds maximum propagation delay time, high to low level output

  • Memory Device Type

    rom

  • Unpackaged Unit Weight

    1.2 grams

  • Test Data Document

    36378-1005758 drawing

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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