N82S115N

Technical Characteristics

• Bit Quantity

  4096

• Time Rating Per Chacteristic

  60.00 nanoseconds maximum propagation delay time, low to high level output and 6

• Terminal Type And Quantity

  24 printed circuit

• Body Length

  1.255 inches maximum

• Body Width

  0.545 inches minimum and 0.555 inches maximum

• End Item Identification

  c130e-t59 fscm 36378

• ~1

  e output

• Features Provided

  monolithic and positive outputs and bipolar and w/enable and schottky and 3-stat

• Inclosure Material

  plastic

• Output Logic Form

  transistor-transistor logic

• Input Circuit Pattern

  12 input

• Body Height

  0.140 inches minimum and 0.180 inches maximum

• Maximum Power Dissipation Rating

  1225.0 milliwatts

• Operating Temp Range

  -0.0/+75.0 deg celsius

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Configuration

  dual-in-line

• Word Quantity

  512

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 5.5 volts maximum power source

• ~1

  0.00 nanoseconds maximum propagation delay time, high to low level output

• Memory Device Type

  rom

• Unpackaged Unit Weight

  1.2 grams

• Test Data Document

  36378-1005758 drawing