L537000413

Technical Characteristics

• Test Data Document

  07187-4045271 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Input Circuit Pattern

  19 input

• Features Provided

  monolithic and hermetically sealed and electrostatic sensitive and w/clock and electrically alterable and bidirectional

• Memory Capacity

  unknown

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Time Rating Per Chacteristic

  100.00 nanoseconds maximum propagation delay time, low to high level output and 100.00 nanoseconds maximum propagation delay time, high to low level output

• Bit Quantity (Non-Core)

  512

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  -35.0 volts minimum power source and 3.0 volts maximum power source

• Body Width

  0.350 inches minimum and 0.390 inches maximum

• Inclosure Configuration

  dual-in-line

• Maximum Power Dissipation Rating

  750.0 milliwatts

• Body Height

  0.210 inches maximum

• Terminal Type And Quantity

  22 printed circuit

• Body Length

  1.260 inches maximum

• Word Quantity (Non-Core)

  64

• Operating Temp Range

  +0.0/+70.0 deg celsius

• Output Logic Form

  metal oxide-semiconductor logic