N82S115F

Technical Characteristics

• Test Data Document

  23259-es52spl70p drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Body Height

  0.130 inches minimum and 0.170 inches maximum

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 5.5 volts maximum power source

• Features Provided

  w/storage and w/enable and programmable and bipolar and monolithic and hermetically sealed and schottky and w/strobe

• Memory Capacity

  unknown

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Time Rating Per Chacteristic

  90.00 nanoseconds maximum propagation delay time, low to high level output and 90.00 nanoseconds maximum propagation delay time, high to low level output

• Terminal Surface Treatment

  solder

• Body Width

  0.560 inches maximum

• Input Circuit Pattern

  12 input

• Inclosure Material

  ceramic and glass

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Body Length

  1.235 inches minimum and 1.290 inches maximum

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Word Quantity (Non-Core)

  512

• Output Logic Form

  transistor-transistor logic

• Bit Quantity (Non-Core)

  4096