CDR13BG2R7EBMM

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Test Data Document

  81349-mil-c-55681 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Reliability Failure Rate Level In Percent

  1.0000

• Insulation Resistance At Reference Temp

  1000000.0 megohms

• Overall Height (Non-Core)

  0.102 inches maximum

• Body Style

  chip type

• Precious Material

  palladium or silver

• Overall Width (Non-Core)

  0.110 inches nominal

• Precious Material And Location

  terminal surfaces palladium or terminal surfaces silver

• Body Length

  0.110 inches nominal

• Case Material

  ceramic

• Dissipation Factor At Reference Temp In Percent

  0.0500

• Nonderated Continuous Voltage Rating And Type Per Section

  500.0 dc single section

• Temp Coefficient Of Capacitance Per Section In Ppm Per Deg Celsius

  90.0 single section

• Tolerance Range Per Section

  -0.10/+0.10 picofarads single section

• Terminal Type And Quantity

  2 bonding pad

• Body Width

  0.110 inches nominal

• Capacitance Value Per Section

  2.700 picofarads single section

• Specification/Standard Data

  81349-mil-c-55681/4 government specification

• Reliability Indicator

  established

• Terminal Surface Treatment

  silver or palladium

• Tolerance Of Temp Coefficient Per Section In Ppm Per Deg Celsius

  -20.0/+20.0 single section

• Nonderated Operating Temp

  -55.0 deg celsius minimum and 125.0 deg celsius maximum

• Body Height

  0.102 inches maximum

• Overall Length (Non-Core)

  0.110 inches nominal

• Schematic Diagram Designator

  no common or grounded electrode(s)

• Insulation Resistance At Maximum Operating Temp

  100000.0 megohms