3BN050S100JD

Technical Characteristics

• Overall Height (Non-Core)

  0.060 inches maximum

• Precious Material

  palladium and silver

• Temp Coefficient Of Capacitance Per Section In Ppm Per Deg Celsius

  0.0 single section

• Terminal Surface Treatment

  palladium and silver

• Body Style

  chip type

• Nonderated Continuous Voltage Rating And Type Per Section

  50.0 dc single section

• Case Material

  ceramic

• Body Length

  0.100 inches maximum

• Schematic Diagram Designator

  no common or grounded electrode(s)

• Insulation Resistance At Reference Temp

  100000.0 megohms

• Terminal Length

  0.010 inches minimum and 0.030 inches maximum

• Precious Material And Location

  terminal surfaces palladium and terminal surfaces silver

• Insulation Resistance At Maximum Operating Temp

  10000.0 megohms

• Nonderated Operating Temp

  -55.0 deg celsius minimum and 125.0 deg celsius maximum

• Dissipation Factor At Reference Temp In Percent

  0.100

• Body Height

  0.060 inches maximum

• Overall Width (Non-Core)

  0.055 inches maximum

• Reliability Indicator

  not established

• Capacitance Value Per Section

  10.000 picofarads single section

• Body Width

  0.055 inches maximum

• Tolerance Of Temp Coefficient Per Section In Ppm Per Deg Celsius

  -30.0/+30.0 single section

• Overall Length (Non-Core)

  0.100 inches maximum

• Terminal Type And Quantity

  2 bonding pad

• Tolerance Range Per Section

  -5.00/+5.00 percent single section