442-100
Semiconductor Devices and Associated Hardware
TRANSISTOR
442-100
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
120.0 maximum collector to base voltage/static/emitter open and 7.0 maximum emitter to base voltage, static, collector open and 75.0 maximum collector-to-emitter, substaining voltage, base open-circuited and 90.0 maximum collector-to-emitter substaining
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current minimum and 5.00 amperes source cutoff current maximum
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Power Rating Per Characteristic
35.0 watts small-signal input power, common-collector maximum
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~1
voltage, with specified circuit between base a
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-66
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Electrode Internally-Electrically Connected To Case
collector
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Width
0.700 inches nominal
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Overall Height
0.340 inches nominal
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Overall Length
1.107 inches nominal
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction