DMS 91032B

Semiconductor Devices and Associated Hardware

TRANSISTOR

DMS 91032B

5961-01-130-8544

5961 - Semiconductor Devices and Associated Hardware

Defense Electronics Supply Center

TRANSISTOR

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Technical Characteristics

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Mounting Method

    terminal

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-72

  • Voltage Rating In Volts Per Characteristic

    35.0 maximum drain to gate voltage and 27.0 maximum drain to source voltage

  • Power Rating Per Characteristic

    1.2 watts small-signal input power, common-collector absolute

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    50.00 milliamperes source cutoff current maximum of standard range

  • Terminal Length

    0.500 inches minimum

  • End Item Identification

    data link 76301

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Test Data Document

    13499-352-8525 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Terminal Circle Diameter

    0.100 inches nominal

Certified to
AS6081 Methods

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