IR425

Technical Characteristics

• Inclosure Material

  glass

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  t0-3

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  700.0 maximum collector to base voltage,dc and 500.0 maximum collector to emitter voltage/static/base open

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Power Rating Per Characteristic

  125.0 watts maximum total device dissipation

• Mounting Method

  unthreaded hole

• Mounting Facility Quantity

  2

• Overall Width

  1.050 inches maximum

• Overall Length

  1.573 inches maximum