C1384R82
Semiconductor Devices and Associated Hardware
TRANSISTOR
C1384R82
5961 - Semiconductor Devices and Associated Hardware
Matsushita Electric Industrial
TRANSISTOR
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Technical Characteristics
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Special Features
junction pattern arrangement: npn
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to base voltage/static/emitter open and 50.0 maximum collector to emitter voltage/static/base open and 5.0 maximum emitter to base voltage, static, collector open
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Maximum Operating Temp Per Measurement Point
135.0 deg celsius junction
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Overall Length
8.6 millimeters maximum
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Semiconductor Material
silicon
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Inclosure Material
plastic
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Overall Width
6.1 millimeters maximum
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Current Rating Per Characteristic
1.00 amperes source cutoff current maximum
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Power Rating Per Characteristic
750.0 milliwatts small-signal input power, common-collector minimum
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Overall Height
5.1 millimeters maximum
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Transfer Ratio
120.0 minimum static forward current transfer ratio, common-emitter and 240.0 maximum static forward current transfer ratio, common-emitter
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Length
13.0 millimeters minimum
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Internal Configuration
junction contact