N82S185-F

Technical Characteristics

• Memory Device Type

  rom

• Bit Quantity

  8192

• Features Provided

  hermetically sealed and programmable and bipolar and 3-state output and w/enable

• Maximum Power Dissipation Rating

  409.6 milliwatts

• Body Width

  0.302 inches maximum

• Terminal Type And Quantity

  18 printed circuit

• Unpackaged Unit Weight

  3.0 grams

• Time Rating Per Chacteristic

  40.00 nanoseconds maximum propagation delay time,low to high level output and 40.00 nanoseconds maximum propagation delay time,high to low level output

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Terminal Surface Treatment

  solder

• Word Quantity

  2048

• Input Circuit Pattern

  12 input

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Inclosure Material

  ceramic

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Operating Temp Range

  m0.0/p75.0 deg celsius

• Body Height

  0.175 inches maximum

• Body Length

  0.925 inches maximum