N82S123F

Technical Characteristics

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Inclosure Material

  ceramic

• Input Circuit Pattern

  6 input

• Terminal Type And Quantity

  16 printed circuit

• Unpackaged Unit Weight

  2.2 grams

• Memory Device Type

  prom

• Time Rating Per Chacteristic

  50.00 nanoseconds maximum propagation delay time,low to high level output and 50.00 nanoseconds maximum propagation delay time,high to low level output

• Word Quantity

  32

• Bit Quantity

  256

• Maximum Power Dissipation Rating

  332.8 milliwatts

• Body Length

  0.808 inches maximum

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum total supply

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Features Provided

  hermetically sealed and programmable and bipolar and w/enable

• Operating Temp Range

  m0.0/p75.0 deg celsius

• Body Height

  0.204 inches maximum

• Body Width

  0.294 inches maximum