585R649H01

Technical Characteristics

• Component Function Relationship

  matched

• Overall Height

  0.330 inches maximum all transistor

• Electrode Internally-Electrically Connected To Case

  collector all transistor

• Semiconductor Material

  silicon all transistor

• Features Provided

  burn in and hermetically sealed case

• Current Rating Per Characteristic

  -50.00 amperes maximum collector current, dc all transistor and -2.00 amperes maximum base current, dc all transistor

• Terminal Type And Quantity

  2 pin all transistor and 1 case all transistor

• Power Rating Per Characteristic

  300.0 watts maximum total device dissipation all transistor

• Overall Width

  1.050 inches maximum all transistor

• Special Features

  semiconductor device set

• Inclosure Material

  metal all transistor

• Overall Length

  1.550 inches maximum all transistor

• Component Name And Quantity

  2 transistor

• Internal Configuration

  junction contact-darlington connected all transistor

• Mounting Method

  unthreaded hole all transistor

• Voltage Rating In Volts Per Characteristic

  -120.0 maximum collector to emitter voltage/static/base open all transistor and -120.0 maximum collector to base voltage/static/emitter open all transistor and -5.0 maximum emitter to base voltage, static, collector open all transistor

• Mounting Facility Quantity

  2 all transistor

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction all transistor

• Internal Junction Configuration

  pnp all transistor