DTS709

Technical Characteristics

• Mounting Facility Quantity

  2

• Electrode Internally-Electrically Connected To Case

  collector

• Mounting Method

  unthreaded hole

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Inclosure Material

  metal

• Overall Height

  0.480 inches maximum

• Overall Diameter

  0.875 inches maximum

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  900.0 maximum breakdown voltage, collector-to-emitter, base open

• Special Features

  junction pattern arrangement: npn

• Terminal Type And Quantity

  2 uninsulated wire lead and 1 case