NTE128
Semiconductor Devices and Associated Hardware
TRANSISTOR
NTE128
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Current Rating Per Characteristic
0.70 amperes source cutoff current maximum and 0.20 amperes source cutoff current minimum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Diameter
0.360 inches nominal
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage, collector to emitter, sustained and 4.0 maximum emitter to base voltage, static, collector open
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Terminal Length
0.500 inches nominal
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Inclosure Material
metal
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Overall Length
0.250 inches nominal
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-39
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector preset