N82S115F

Technical Characteristics

• Memory Device Type

  rom

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic and glass

• Body Length

  1.235 inches minimum and 1.290 inches maximum

• Terminal Type And Quantity

  24 printed circuit

• Unpackaged Unit Weight

  6.5 grams

• Voltage Rating And Type Per Characteristic

  m1.2 volts minimum power source and 5.5 volts maximum power source

• Word Quantity

  512

• Bit Quantity

  4096

• Input Circuit Pattern

  12 input

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Features Provided

  hermetically sealed and 3-state output and schottky and w/enable and w/strobe and programmable

• End Item Identification

  an/gpn-t4 23259

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Operating Temp Range

  m0.0/p75.0 deg celsius

• Body Height

  0.130 inches minimum and 0.170 inches maximum

• Body Width

  0.560 inches maximum