MD-2147H-3/B

Technical Characteristics

• Memory Device Type

  rom

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Word Quantity (Non-Core)

  4096

• Body Width

  0.265 inches minimum and 0.310 inches maximum

• Terminal Type And Quantity

  18 printed circuit

• Inclosure Configuration

  dual-in-line

• Features Provided

  high speed and static operation and hermetically sealed

• Maximum Power Dissipation Rating

  1.2 watts

• Input Circuit Pattern

  15 input

• Bit Quantity (Non-Core)

  4096

• Time Rating Per Chacteristic

  85.00 nanoseconds maximum propagation delay time, low to high level output

• Output Logic Form

  metal oxide-semiconductor logic

• Body Length

  0.880 inches minimum and 0.920 inches maximum

• Operating Temp Range

  -10.0/+85.0 deg celsius

• Body Height

  0.140 inches minimum and 0.165 inches maximum

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius