N82S115N

Technical Characteristics

• Bit Quantity (Non-Core)

  4096

• Body Height

  0.145 inches minimum and 0.155 inches maximum

• Body Length

  1.240 inches minimum and 1.255 inches maximum

• Time Rating Per Chacteristic

  60.00 nanoseconds maximum propagation delay time, low to high level output

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Operating Temp Range

  -0.0/+75.0 deg celsius

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  12 input

• Features Provided

  bipolar and programmable and 3-state output

• Voltage Rating And Type Per Characteristic

  -1.2 volts minimum power source and 5.5 volts maximum power source

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Word Quantity (Non-Core)

  512

• Inclosure Material

  plastic

• Output Logic Form

  transistor-transistor logic

• Body Width

  0.545 inches minimum and 0.555 inches maximum

• Maximum Power Dissipation Rating

  675.8 milliwatts