N82S115F

Technical Characteristics

• Inclosure Material

  ceramic and glass

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Body Length

  1.235 inches minimum and 1.290 inches maximum

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Word Quantity (Non-Core)

  512

• Output Logic Form

  transistor-transistor logic

• Test Data Document

  28480-1816-0910 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Time Rating Per Chacteristic

  60.00 nanoseconds maximum propagation delay time, low to high level output and 60.00 nanoseconds maximum propagation delay time, high to low level output

• Bit Quantity (Non-Core)

  4096

• Input Circuit Pattern

  16 input

• Voltage Rating And Type Per Characteristic

  -1.5 volts maximum power source and 5.5 volts maximum power source

• Memory Capacity

  unknown

• Body Height

  0.140 inches minimum and 0.180 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• End Item Identification

  4920-01-049-0223 e/i fscm 88818

• Terminal Surface Treatment

  solder

• Features Provided

  monolithic and hermetically sealed and positive outputs and programmed and bipolar and schottky and 3-state output

• Body Width

  0.560 inches maximum