TXVBT-2101
Semiconductor Devices and Associated Hardware
TRANSISTOR
TXVBT-2101
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Diameter
0.110 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
pn
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Mounting Method
press fit
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Semiconductor Material
silicon
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Precious Material And Location
terminals gold
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Overall Length
0.050 inches nominal
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Inclosure Material
metal
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Terminal Type And Quantity
4 ribbon
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Precious Material
gold
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius case
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Power Rating Per Characteristic
450.0 milliwatts maximum total power dissipation
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Current Rating Per Characteristic
35.00 milliamperes maximum collector current,dc
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Voltage Rating In Volts Per Characteristic
25.0 maximum collector to base voltage,dc and 16.0 maximum breakdown voltage,collector-to-emitter,base open and 1.0 maximum emitter to base voltage,instantaneous
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Features Provided
hermetically sealed case