RF1001R
Semiconductor Devices and Associated Hardware
TRANSISTOR
RF1001R
5961 - Semiconductor Devices and Associated Hardware
Trw Electronics And Defense Sector
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Inclosure Material
metal
-
Overall Diameter
0.300 inches maximum
-
Internal Configuration
junction contact
-
Internal Junction Configuration
npn
-
Features Provided
hermetically sealed case
-
Nominal Thread Size
0.164 inches
-
Semiconductor Material
silicon
-
Voltage Rating In Volts Per Characteristic
3.5 maximum emitter to base voltage, static, collector open
-
Current Rating Per Characteristic
425.00 milliamperes maximum collector current, dc
-
Iii Precious Material
gold
-
Terminal Type And Quantity
4 ribbon
-
Voltage Rating In Volts Per Characteristic
35.0 maximum collector to emitter voltage/static/base open and
-
Mounting Method
threaded stud
-
Thread Series Designator
unc
-
Iii Precious Material And Location
terminals gold
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Power Rating Per Characteristic
5.0 watts maximum total power dissipation
-
Voltage Rating In Volts Per Characteristic
45.0 maximum collector to base voltage/static/emitter open and
-
Mounting Facility Quantity
1
-
Overall Length
0.200 inches maximum