2N6607
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N6607
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
SEMICONDUCTOR DEVICE,THYRISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-18
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Terminal Circle Diameter
0.100 inches nominal
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.230 inches maximum
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Electrode Internally-Electrically Connected To Case
anode
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Overall Length
0.210 inches maximum
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Current Rating Per Characteristic
275.00 milliamperes forward current, total rms nanoamperes
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Semiconductor Material
silicon
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Power Rating Per Characteristic
100.0 milliwatts small-signal input power, common-collector peak
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Specification/Standard Data
80131-release6646 professional/industrial association specification
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Special Features
internal junction configuration arrangement pnpn
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Terminal Length
0.500 inches minimum
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Voltage Rating In Volts Per Characteristic
100.0 maximum repetitive peak off-state voltage
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Inclosure Material
metal