352-8531-020
Semiconductor Devices and Associated Hardware
TRANSISTOR
352-8531-020
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Overall Diameter
0.847 inches maximum
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Voltage Rating In Volts Per Characteristic
110.0 maximum breakdown voltage, collector-to-base, emitter open and 110.0 maximum collector to emitter reverse voltage and 3.6 maximum emitter to base voltage, static, collector open
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Features Provided
hermetically sealed case
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Overall Length
1.470 inches maximum
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Semiconductor Material
silicon
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Terminal Type And Quantity
4 ribbon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
press fit
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Power Rating Per Characteristic
320.0 watts small-signal input power, common-collector absolute
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Inclosure Material
metal
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Current Rating Per Characteristic
20.00 amperes source cutoff current maximum