DMS 85030 B
Semiconductor Devices and Associated Hardware
TRANSISTOR
DMS 85030 B
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Overall Length
1.573 inches maximum
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Special Features
junction pattern arrangement: pnp
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Features Provided
hermetically sealed case
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Overall Width
1.050 inches maximum
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Voltage Rating In Volts Per Characteristic
-60.0 maximum collector to base voltage, dc and -5.0 maximum emitter to base voltage, dc
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Semiconductor Material
silicon
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Power Rating Per Characteristic
175.0 watts small-signal input power, common-collector absolute
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Internal Configuration
junction contact-darlington connected
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Current Rating Per Characteristic
10.00 amperes source cutoff current maximum and 0.50 amperes source cutoff current minimum
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Overall Height
0.450 inches maximum