DMS 85030 B

Semiconductor Devices and Associated Hardware

TRANSISTOR

DMS 85030 B

5961-01-159-3333

5961 - Semiconductor Devices and Associated Hardware

Defense Electronics Supply Center

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Technical Characteristics

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Electrode Internally-Electrically Connected To Case

    collector

  • Overall Length

    1.573 inches maximum

  • Special Features

    junction pattern arrangement: pnp

  • Features Provided

    hermetically sealed case

  • Overall Width

    1.050 inches maximum

  • Voltage Rating In Volts Per Characteristic

    -60.0 maximum collector to base voltage, dc and -5.0 maximum emitter to base voltage, dc

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    175.0 watts small-signal input power, common-collector absolute

  • Mounting Facility Quantity

    2

  • Terminal Type And Quantity

    2 uninsulated wire lead and 1 case

  • Internal Configuration

    junction contact-darlington connected

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Current Rating Per Characteristic

    10.00 amperes source cutoff current maximum and 0.50 amperes source cutoff current minimum

  • Overall Height

    0.450 inches maximum

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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