G111853-1
Semiconductor Devices and Associated Hardware
TRANSISTOR
G111853-1
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Voltage Rating In Volts Per Characteristic
700.0 maximum collector to base voltage, dc and 500.0 maximum breakdown voltage, collector to emitter, sustained and 700.0 maximum collector to emitter voltage, dc and 8.0 maximum emitter to base voltage, dc
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Test Data Document
49956-g111853 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Overall Height
0.300 inches maximum
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Overall Length
1.550 inches maximum
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Internal Configuration
junction contact-darlington connected
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Current Rating Per Characteristic
75.00 amperes source cutoff current maximum and 15.00 amperes source cutoff current minimum
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Power Rating Per Characteristic
250.0 watts small-signal input power, common-collector preset