GS810LD1
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
GS810LD1
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Terminal Type And Quantity
2 turret
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Power Rating Per Characteristic
7.5 watts maximum total power dissipation
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Current Rating Per Characteristic
25.00 microamperes maximum reverse current, average
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Voltage Rating In Volts Per Characteristic
295.0 maximum reverse voltage, dc
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Mounting Method
terminal and unthreaded hole
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Internal Junction Configuration
pn
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Internal Configuration
junction contact
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Inclosure Material
glass and metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Overall Width
0.530 inches maximum
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Overall Height
2.280 inches maximum
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Terminal Length
0.365 inches maximum
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Overall Length
1.405 inches maximum