GS810LD1

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,DIODE

GS810LD1

5961-01-159-7700

5961 - Semiconductor Devices and Associated Hardware

Northrop Grumman Systems Corporation

SEMICONDUCTOR DEVICE,DIODE

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Technical Characteristics

  • Terminal Type And Quantity

    2 turret

  • Power Rating Per Characteristic

    7.5 watts maximum total power dissipation

  • Current Rating Per Characteristic

    25.00 microamperes maximum reverse current, average

  • Voltage Rating In Volts Per Characteristic

    295.0 maximum reverse voltage, dc

  • Mounting Method

    terminal and unthreaded hole

  • Internal Junction Configuration

    pn

  • Internal Configuration

    junction contact

  • Inclosure Material

    glass and metal

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius ambient air

  • Semiconductor Material

    silicon

  • Features Provided

    hermetically sealed case

  • Overall Width

    0.530 inches maximum

  • Overall Height

    2.280 inches maximum

  • Terminal Length

    0.365 inches maximum

  • Overall Length

    1.405 inches maximum

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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