M38510/20302BEB

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Time Rating Per Chacteristic

  75.00 nanoseconds maximum propagation delay time, low to high level output and 75.00 nanoseconds maximum propagation delay time, high to low level output

• Inclosure Material

  ceramic and glass

• Terminal Surface Treatment

  solder

• End Item Identification

  radar system an/fps-117

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Body Length

  0.840 inches maximum

• Memory Device Type

  rom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Terminal Type And Quantity

  16 printed circuit

• Input Circuit Pattern

  10 input

• Maximum Power Dissipation Rating

  739.0 milliwatts

• Features Provided

  monolithic and schottky and bipolar and programmable and hermetically sealed

• Body Height

  0.185 inches maximum

• Case Outline Source And Designator

  d-2 mil-m-38510

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Test Data Document

  03538-77a100386 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Bit Quantity (Non-Core)

  1024

• Output Logic Form

  transistor-transistor logic

• Word Quantity (Non-Core)

  512

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source