2N5240

Technical Characteristics

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  t0-3

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Features Provided

  hermetically sealed case

• Power Rating Per Characteristic

  100.0 milliwatts small-signal input power, common-collector minimum

• Overall Width

  1.050 inches maximum

• Current Rating Per Characteristic

  5.00 amperes repetitive peak forward current blank and 2.00 amperes repetitive peak forward current maximum

• Semiconductor Material

  silicon

• Test Data Document

  02735-66969 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Voltage Rating In Volts Per Characteristic

  6.0 maximum emitter to base voltage, static, collector open and 375.0 maximum breakdown voltage, collector-to-base, emitter open and 300.0 maximum breakdown voltage, collector-to-emitter, base open

• Mounting Facility Quantity

  2

• Overall Length

  1.421 inches maximum

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Transfer Ratio

  80.0 maximum small-signal short-circuit forward current transfer ratio, common-emitter

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Terminal Type And Quantity

  2 unthreaded hole and 1 case

• Overall Height

  0.450 inches maximum